HIP2100EIBZT Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 114 V
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4V, 7V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
на замовлення 2079 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 407.32 грн |
| 10+ | 263.09 грн |
| 25+ | 229.75 грн |
| 100+ | 180.49 грн |
| 250+ | 163.44 грн |
| 500+ | 153.05 грн |
| 1000+ | 142.05 грн |
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Технічний опис HIP2100EIBZT Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 9V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 114 V, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 10ns, 10ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 4V, 7V, Current - Peak Output (Source, Sink): 2A, 2A, DigiKey Programmable: Not Verified.
Інші пропозиції HIP2100EIBZT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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HIP2100EIBZT | Виробник : Renesas Electronics Corporation |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 114 V Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 4V, 7V Current - Peak Output (Source, Sink): 2A, 2A DigiKey Programmable: Not Verified |
товару немає в наявності |
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HIP2100EIBZT | Виробник : Renesas / Intersil |
Gate Drivers 100V H-BRDG DRVR 8LD EP |
товару немає в наявності |