HIP2211FBZ Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 115 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.47V, 1.84V
Current - Peak Output (Source, Sink): 3A, 4A
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Технічний опис HIP2211FBZ Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 6V ~ 18V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 115 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 20ns, 20ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 1.47V, 1.84V, Current - Peak Output (Source, Sink): 3A, 4A.
Інші пропозиції HIP2211FBZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| HIP2211FBZ | Виробник : Renesas / Intersil |
Gate Drivers 100V/4A HI/LI Half Bridge Driver, 8ld SOIC |
товару немає в наявності |