Технічний опис HIP6603BCB HIT
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 0°C ~ 125°C (TJ), Voltage - Supply: 10.8V ~ 13.2V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 15 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 20ns, 20ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, DigiKey Programmable: Not Verified.
Інші пропозиції HIP6603BCB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| HIP6603BCB | Виробник : INTEL |
 SOP |
на замовлення 82 шт: термін постачання 14-28 дні (днів) |
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HIP6603BCB | Виробник : Renesas Electronics Corporation |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 10.8V ~ 13.2V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 15 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 20ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
товару немає в наявності |