Технічний опис HIP6603BECBZ Intersil
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Rise / Fall Time (Typ): 20ns, 20ns, Supplier Device Package: 8-SOIC-EP, High Side Voltage - Max (Bootstrap): 15 V, Input Type: Non-Inverting, Voltage - Supply: 10.8V ~ 13.2V, Operating Temperature: 0°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tube, DigiKey Programmable: Not Verified, Gate Type: N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous.
Інші пропозиції HIP6603BECBZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
HIP6603BECBZ | Renesas Electronics Corporation |
 Description: IC GATE DRVR HALF-BRIDGE 8SOICRise / Fall Time (Typ): 20ns, 20ns Supplier Device Package: 8-SOIC-EP High Side Voltage - Max (Bootstrap): 15 V Input Type: Non-Inverting Voltage - Supply: 10.8V ~ 13.2V Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tube DigiKey Programmable: Not Verified Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous |
товару немає в наявності |
В кошику од. на суму грн. |
 |
HIP6603BECBZ | Renesas / Intersil |
Gate Drivers SYNCHRONUSCTIFIED BUCK MSFT DRVR |
товару немає в наявності |
В кошику од. на суму грн. |
| HIP6603BECBZ |
|
Виробник: Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 15 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
DigiKey Programmable: Not Verified
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 15 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
DigiKey Programmable: Not Verified
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
товару немає в наявності
В кошику
од. на суму грн.
| HIP6603BECBZ |
|
Виробник: Renesas / Intersil
Gate Drivers SYNCHRONUSCTIFIED BUCK MSFT DRVR
Gate Drivers SYNCHRONUSCTIFIED BUCK MSFT DRVR
товару немає в наявності
В кошику
од. на суму грн.