HMF12N65S MULTICOMP PRO
Виробник: MULTICOMP PRO
Description: MULTICOMP PRO - HMF12N65S - Leistungs-MOSFET, n-Kanal, 650 V, 12 A, 0.85 ohm, TO-220F, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 51W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-220F
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro N Channel MOSFETs
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.85ohm
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 756.27 грн |
| 5+ | 616.93 грн |
| 10+ | 513.04 грн |
| 50+ | 379.92 грн |
| 100+ | 322.39 грн |
| 250+ | 305.82 грн |
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Технічний опис HMF12N65S MULTICOMP PRO
Description: MULTICOMP PRO - HMF12N65S - Leistungs-MOSFET, n-Kanal, 650 V, 12 A, 0.85 ohm, TO-220F, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 12A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 51W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: TO-220F, Anzahl der Pins: 3Pin(s), Produktpalette: Multicomp Pro N Channel MOSFETs, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.85ohm.
Інші пропозиції HMF12N65S за ціною від 92.42 грн до 92.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
| HMF12N65S | HY Electronic (Cayman) Limited |
Description: HMF12N65S Packaging: Retail Package Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 850mOhm @ 6A, 10V Power Dissipation (Max): 51W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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| HMF12N65S |
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Виробник: HY Electronic (Cayman) Limited
Description: HMF12N65S
Packaging: Retail Package
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: HMF12N65S
Packaging: Retail Package
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.42 грн |