HP8KA1TB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 14A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 8-HSOP
Description: MOSFET 2N-CH 30V 14A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 8-HSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 32.56 грн |
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Технічний опис HP8KA1TB Rohm Semiconductor
Description: MOSFET 2N-CH 30V 14A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 14A, Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 10mA, Supplier Device Package: 8-HSOP.
Інші пропозиції HP8KA1TB за ціною від 28.43 грн до 84.47 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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HP8KA1TB | Виробник : Rohm Semiconductor | Trans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R |
на замовлення 1170 шт: термін постачання 21-31 дні (днів) |
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HP8KA1TB | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 14A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 8-HSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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HP8KA1TB | Виробник : ROHM Semiconductor | MOSFET NCH+NCH 30V POWER MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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HP8KA1TB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 28A; 3W; HSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Pulsed drain current: 28A Power dissipation: 3W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain кількість в упаковці: 1 шт |
товар відсутній |
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HP8KA1TB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 28A; 3W; HSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Pulsed drain current: 28A Power dissipation: 3W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain |
товар відсутній |