HP8KA1TB Rohm Semiconductor

Description: MOSFET 2N-CH 30V 14A 8HSOP, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 10mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V, Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 14A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).