HP8KC5TB1 Rohm Semiconductor

Description: 60V 12A, DUAL NCH+NCH, HSOP8, PO, Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 3W (Ta), 20W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V.