HP8KC7TB1 ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFETs 60V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC7 is a low on-resistance MOSFET ideal for switching applications.
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.01 грн |
| 10+ | 154.81 грн |
| 100+ | 94.58 грн |
| 500+ | 81.46 грн |
| 1000+ | 78.70 грн |
| 2500+ | 75.94 грн |
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Технічний опис HP8KC7TB1 ROHM Semiconductor
Description: MOSFET 2N-CH 60V 13.5A 8HSOP, Drain to Source Voltage (Vdss): 60V, Power - Max: 3W (Ta), 26W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc).
Інші пропозиції HP8KC7TB1 за ціною від 77.21 грн до 248.52 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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HP8KC7TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 13.5A 8HSOP Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3W (Ta), 26W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 2431 шт: термін постачання 21-31 дні (днів) |
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| HP8KC7TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 13.5A 8HSOP
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 13.5A 8HSOP
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 2431 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.52 грн |
| 10+ | 156.38 грн |
| 100+ | 109.02 грн |
| 500+ | 83.31 грн |
| 1000+ | 77.21 грн |