HP8KE5TB1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: 100V 8.5A, DUAL NCH+NCH, HSOP8,
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3W (Ta), 20W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Технічний опис HP8KE5TB1 Rohm Semiconductor
Description: 100V 8.5A, DUAL NCH+NCH, HSOP8,, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc), Drain to Source Voltage (Vdss): 100V, Power - Max: 3W (Ta), 20W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції HP8KE5TB1 за ціною від 34.17 грн до 139.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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HP8KE5TB1 | ROHM Semiconductor | MOSFETs HSOP8 100V 8.5A N CHAN MOS |
на замовлення 2228 шт: термін постачання 21-30 дні (днів) |
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HP8KE5TB1 | Rohm Semiconductor |
Description: 100V 8.5A, DUAL NCH+NCH, HSOP8, Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc) Drain to Source Voltage (Vdss): 100V Power - Max: 3W (Ta), 20W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
| HP8KE5TB1 |
Виробник: ROHM Semiconductor
MOSFETs HSOP8 100V 8.5A N CHAN MOS
MOSFETs HSOP8 100V 8.5A N CHAN MOS
на замовлення 2228 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.70 грн |
| 10+ | 84.95 грн |
| 100+ | 50.67 грн |
| 500+ | 42.94 грн |
| 1000+ | 35.83 грн |
| 2500+ | 34.17 грн |
| HP8KE5TB1 |
Виробник: Rohm Semiconductor
Description: 100V 8.5A, DUAL NCH+NCH, HSOP8,
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3W (Ta), 20W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 100V 8.5A, DUAL NCH+NCH, HSOP8,
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3W (Ta), 20W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.02 грн |
| 10+ | 85.18 грн |
| 100+ | 57.44 грн |
| 500+ | 42.75 грн |
| 1000+ | 39.16 грн |