HP8M31TB1 Rohm Semiconductor

Description: MOSFET N/P-CH 60V 8.5A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V, Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active.