| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.64 грн |
| 10+ | 87.33 грн |
| 100+ | 62.96 грн |
| 500+ | 54.33 грн |
| 1000+ | 52.81 грн |
| 2500+ | 50.74 грн |
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Технічний опис HP8MA2TB1 ROHM Semiconductor
Description: MOSFET N/P-CH 30V 18A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V, Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.
Інші пропозиції HP8MA2TB1 за ціною від 53.09 грн до 129.70 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HP8MA2TB1 | Rohm Semiconductor |
 Description: MOSFET N/P-CH 30V 18A 8HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
на замовлення 1674 шт: термін постачання 21-31 дні (днів) |
|
| HP8MA2TB1 |
|
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 18A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET N/P-CH 30V 18A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
на замовлення 1674 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.70 грн |
| 10+ | 94.31 грн |
| 100+ | 72.48 грн |
| 500+ | 57.57 грн |
| 1000+ | 53.09 грн |