HP8MB5TB1 Rohm Semiconductor

Description: MOSFET N/P-CH 40V 6A 8HSOP, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V, Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 3W (Ta), 20W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).