HS1JFL Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 10000+ | 3.86 грн |
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Технічний опис HS1JFL Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123F, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOD-123F, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 6pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Tape & Reel (TR).
Інші пропозиції HS1JFL за ціною від 3.31 грн до 26.11 грн
| Фото | Назва | Виробник | Інформація |
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HS1JFL | Taiwan Semiconductor |
Rectifiers 75ns, 1A, 600V, High Efficient Recovery Rectifier |
на замовлення 12025 шт: термін постачання 21-30 дні (днів) |
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HS1JFL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SOD123F Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 6pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
на замовлення 15260 шт: термін постачання 21-31 дні (днів) |
|
| HS1JFL |
|
Виробник: Taiwan Semiconductor
Rectifiers 75ns, 1A, 600V, High Efficient Recovery Rectifier
Rectifiers 75ns, 1A, 600V, High Efficient Recovery Rectifier
на замовлення 12025 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.03 грн |
| 28+ | 11.81 грн |
| 100+ | 6.68 грн |
| 500+ | 4.85 грн |
| 1000+ | 3.80 грн |
| 2500+ | 3.66 грн |
| 5000+ | 3.31 грн |
| HS1JFL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
на замовлення 15260 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.11 грн |
| 18+ | 17.52 грн |
| 100+ | 8.84 грн |
| 500+ | 6.77 грн |
| 1000+ | 5.02 грн |
| 2000+ | 4.22 грн |
| 5000+ | 3.97 грн |