Технічний опис HS3A Taiwan Semiconductor
Description: DIODE GEN PURP 50V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Інші пропозиції HS3A
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
HS3A | Виробник : YANGJIE TECHNOLOGY |
![]() Description: Diode: rectifying; SMD; 50V; 3A; 50ns; SMC; Ufmax: 1V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward voltage: 1V Kind of package: reel; tape Reverse recovery time: 50ns Max. forward impulse current: 100A Features of semiconductor devices: superfast switching кількість в упаковці: 5 шт |
товару немає в наявності |
|
![]() |
HS3A | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
|
![]() |
HS3A | Виробник : YANGJIE TECHNOLOGY |
![]() Description: Diode: rectifying; SMD; 50V; 3A; 50ns; SMC; Ufmax: 1V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward voltage: 1V Kind of package: reel; tape Reverse recovery time: 50ns Max. forward impulse current: 100A Features of semiconductor devices: superfast switching |
товару немає в наявності |