HS3D R7G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис HS3D R7G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).
Інші пропозиції HS3D R7G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
HS3D R7G | Taiwan Semiconductor |
Rectifiers 50ns, 3A, 200V, High Efficient Recovery Rectifier |
товару немає в наявності |
В кошику од. на суму грн. |
| HS3D R7G |
|
Виробник: Taiwan Semiconductor
Rectifiers 50ns, 3A, 200V, High Efficient Recovery Rectifier
Rectifiers 50ns, 3A, 200V, High Efficient Recovery Rectifier
товару немає в наявності
В кошику
од. на суму грн.