HS8MA2TCR1 Rohm Semiconductor

Description: MOSFET N/P-CH 30V 5A 9DFN, Supplier Device Package: DFN3333-9DC, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).