HUF75307T3ST Fairchild Semiconductor

Description: MOSFET N-CH 55V 2.6A SOT223-4, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.