HUF75343S3 Harris Corporation
Виробник: Harris Corporation
Description: 75 A, 55 V, 0.009 OHM, N-CHANNEL
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK (TO-262)
| Кількість | Ціна |
|---|---|
| 228+ | 91.00 грн |
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Технічний опис HUF75343S3 Harris Corporation
Description: 75 A, 55 V, 0.009 OHM, N-CHANNEL, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 270W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: I2PAK (TO-262).
Інші пропозиції HUF75343S3 за ціною від 91.00 грн до 91.00 грн
| Фото | Назва | Виробник | Інформація |
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HUF75343S3 | Виробник : Fairchild Semiconductor |
Description: MOSFET N-CH 55V 75A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
на замовлення 540 шт: термін постачання 21-31 дні (днів) |
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HUF75343S3 | Виробник : onsemi |
Description: MOSFET N-CH 55V 75A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-262 (I2PAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
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HUF75343S3 | Виробник : onsemi / Fairchild |
MOSFET 75a 55V 0.009Ohm NCh UltraFET |
товару немає в наявності |