Технічний опис HUF75343S3S FAIRCHILD
Description: MOSFET N-CH 55V 75A D2PAK, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 270W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції HUF75343S3S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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HUF75343S3S | Виробник : onsemi |
Description: MOSFET N-CH 55V 75A D2PAKOperating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
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HUF75343S3S | Виробник : onsemi / Fairchild |
MOSFET PWR MOS ULTRAFET 55V/75A/0.009OHMS N-CHANNEL TO-262AB |
товару немає в наявності |


