HUF76145S3 Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: I2PAK (TO-262), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 270W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ).