Технічний опис HUF76407DK8T FAIRCHILD
Description: MOSFET 2N-CH 60V 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції HUF76407DK8T
| Фото | Назва | Виробник | Інформація |
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HUF76407DK8T | Виробник : onsemi |
 Description: MOSFET 2N-CH 60V 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Drain to Source Voltage (Vdss): 60V Power - Max: 2.5W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
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