Технічний опис HUF76419D3 FAIRCHILD
Description: MOSFET N-CH 60V 20A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: I-PAK, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції HUF76419D3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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HUF76419D3 | Виробник : onsemi |
Description: MOSFET N-CH 60V 20A IPAKInput Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: I-PAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
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HUF76419D3 | Виробник : onsemi / Fairchild |
MOSFETs 20a 60V 0.043 Ohm Logic Level N-Ch |
товару немає в наявності |


