HUF76633P3 onsemi

Description: MOSFET N-CH 100V 39A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 145W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.