Інші пропозиції HUF76633S3ST-F085
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
HUF76633S3ST-F085 | onsemi |
Description: MOSFET N-CH 100V 39A D2PAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 183W (Tj) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
HUF76633S3ST-F085 | ON Semiconductor / Fairchild |
MOSFET NMOS D2PAK 100V 36 MOHM |
товару немає в наявності |
В кошику од. на суму грн. |
| HUF76633S3ST-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 183W (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 39A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 183W (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| HUF76633S3ST-F085 |
![]() |
Виробник: ON Semiconductor / Fairchild
MOSFET NMOS D2PAK 100V 36 MOHM
MOSFET NMOS D2PAK 100V 36 MOHM
товару немає в наявності
В кошику
од. на суму грн.




