Технічний опис HUFA75343S3S FAIRCHILD
Description: MOSFET N-CH 55V 75A D2PAK, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 270W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V.
Інші пропозиції HUFA75343S3S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
HUFA75343S3S | onsemi |
Description: MOSFET N-CH 55V 75A D2PAKVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V Drain to Source Voltage (Vdss): 55 V |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. |
|
HUFA75343S3S | onsemi / Fairchild |
MOSFET 75a 55V 0.009Ohm NCh UltraFET |
товару немає в наявності |
В кошику од. на суму грн. |
| HUFA75343S3S |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 55V 75A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Description: MOSFET N-CH 55V 75A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| HUFA75343S3S |
![]() |
Виробник: onsemi / Fairchild
MOSFET 75a 55V 0.009Ohm NCh UltraFET
MOSFET 75a 55V 0.009Ohm NCh UltraFET
товару немає в наявності
В кошику
од. на суму грн.




