Технічний опис HUFA75617D3S FAIRCHILD
Description: MOSFET N-CH 100V 16A TO252AA, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 64W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V.
Інші пропозиції HUFA75617D3S
| Фото | Назва | Виробник | Інформація |
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HUFA75617D3S | Виробник : onsemi |
 Description: MOSFET N-CH 100V 16A TO252AACurrent - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V |
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