HUFA76407DK8T-F085 onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Технічний опис HUFA76407DK8T-F085 onsemi
Description: MOSFET 2N-CH 60V 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції HUFA76407DK8T-F085 за ціною від 48.99 грн до 175.15 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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HUFA76407DK8T-F085 | onsemi |
Description: MOSFET 2N-CH 60V 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Drain to Source Voltage (Vdss): 60V Power - Max: 2.5W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3141 шт: термін постачання 21-31 дні (днів) |
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HUFA76407DK8T-F085 | onsemi |
MOSFETs 60V Dual N-Channel LogicLevel PwrMOSFET |
на замовлення 2296 шт: термін постачання 21-30 дні (днів) |
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| HUFA76407DK8T-F085 |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 60V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3141 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 168.89 грн |
| 10+ | 104.46 грн |
| 100+ | 71.43 грн |
| 500+ | 53.76 грн |
| 1000+ | 53.10 грн |
| HUFA76407DK8T-F085 |
![]() |
Виробник: onsemi
MOSFETs 60V Dual N-Channel LogicLevel PwrMOSFET
MOSFETs 60V Dual N-Channel LogicLevel PwrMOSFET
на замовлення 2296 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 175.15 грн |
| 10+ | 111.86 грн |
| 100+ | 66.68 грн |
| 500+ | 53.07 грн |
| 1000+ | 50.89 грн |
| 2500+ | 48.99 грн |



