HUFA76429D3 onsemi / Fairchild
| Кількість | Ціна |
|---|---|
| 2+ | 186.66 грн |
| 10+ | 166.16 грн |
| 25+ | 136.03 грн |
| 100+ | 116.30 грн |
Відгуки про товар
Написати відгук
Технічний опис HUFA76429D3 onsemi / Fairchild
Description: MOSFET N-CH 60V 20A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції HUFA76429D3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
HUFA76429D3 | onsemi |
Description: MOSFET N-CH 60V 20A IPAK Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| HUFA76429D3 |
Виробник: onsemi
Description: MOSFET N-CH 60V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 60V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.