HUFA76639P3 Fairchild Semiconductor
Виробник: Fairchild SemiconductorDescription: MOSFET N-CH 100V 51A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 973 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 452+ | 50.39 грн |
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Технічний опис HUFA76639P3 Fairchild Semiconductor
Description: MOSFET N-CH 100V 51A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Інші пропозиції HUFA76639P3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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HUFA76639P3 | Виробник : onsemi |
Description: MOSFET N-CH 100V 51A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
товару немає в наявності |
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HUFA76639P3 | Виробник : onsemi / Fairchild |
MOSFETs 50a 100V 0.027 Ohm Logic Level N-Ch |
товару немає в наявності |