IAUA170N10S5N031AUMA1 Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-HSOF-5-4, Vgs(th) (Max) @ Id: 3.8V @ 110µA, Power Dissipation (Max): 197W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V, Current - Continuous Drain (Id) @ 25°C: 170A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-PowerSFN, Packaging: Tape & Reel (TR).