IAUA250N04S6N007AUMA1 Infineon Technologies

Description: MOSFET_(20V 40V) PG-HSOF-5, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Not For New Designs, Supplier Device Package: PG-HSOF-5-4, Vgs(th) (Max) @ Id: 3V @ 130µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 435A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-PowerSFN, Packaging: Tape & Reel (TR).