Технічний опис IAUA250N04S6N007AUMA1 Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Not For New Designs, Supplier Device Package: PG-HSOF-5-4, Vgs(th) (Max) @ Id: 3V @ 130µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 435A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-PowerSFN, Packaging: Tape & Reel (TR).
Інші пропозиції IAUA250N04S6N007AUMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IAUA250N04S6N007AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Not For New Designs Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3V @ 130µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 435A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
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IAUA250N04S6N007AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Not For New Designs Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3V @ 130µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 435A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| IAUA250N04S6N007AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1350A Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| IAUA250N04S6N007AUMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IAUA250N04S6N007AUMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IAUA250N04S6N007AUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.