IAUA250N04S6N007EAUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
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Технічний опис IAUA250N04S6N007EAUMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Active, Supplier Device Package: PG-HSOF-5-4, Vgs(th) (Max) @ Id: 3V @ 130µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 435A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-PowerSFN, Packaging: Tape & Reel (TR).
Інші пропозиції IAUA250N04S6N007EAUMA1 за ціною від 69.71 грн до 235.50 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IAUA250N04S6N007EAUMA1 | Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
на замовлення 8321 шт: термін постачання 21-30 дні (днів) |
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IAUA250N04S6N007EAUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 435A (Tj) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-HSOF-5-4 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4017 шт: термін постачання 21-31 дні (днів) |
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| IAUA250N04S6N007EAUMA1 |
|
Виробник: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
на замовлення 8321 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 108.54 грн |
| 10+ | 97.27 грн |
| 100+ | 76.83 грн |
| 500+ | 75.42 грн |
| 2000+ | 69.71 грн |
| IAUA250N04S6N007EAUMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4017 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 235.50 грн |
| 10+ | 148.21 грн |
| 100+ | 103.24 грн |
| 500+ | 83.76 грн |