IAUA250N04S6N008AUMA1 Infineon Technologies

Description: OPTIMOS POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Active, Supplier Device Package: PG-HSOF-5-1, Vgs(th) (Max) @ Id: 3V @ 90µA, Power Dissipation (Max): 172W (Tc), Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-PowerSFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.