| Кількість | Ціна |
|---|---|
| 2+ | 175.97 грн |
| 10+ | 146.71 грн |
| 100+ | 106.43 грн |
| 250+ | 100.09 грн |
| 500+ | 91.63 грн |
| 1000+ | 85.99 грн |
| 2000+ | 72.60 грн |
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Технічний опис IAUAN04S7N007AUMA1 Infineon Technologies
Description: IAUAN04S7N007AUMA1, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj), Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V, Power Dissipation (Max): 149W (Tc), Vgs(th) (Max) @ Id: 3V @ 73µA, Supplier Device Package: PG-HSOF-5-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції IAUAN04S7N007AUMA1 за ціною від 105.26 грн до 176.03 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IAUAN04S7N007AUMA1 | Infineon Technologies |
 Description: IAUAN04S7N007AUMA1Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Power Dissipation (Max): 149W (Tc) Vgs(th) (Max) @ Id: 3V @ 73µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 364 шт: термін постачання 21-31 дні (днів) |
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| IAUAN04S7N007AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 176.03 грн |
| 10+ | 132.86 грн |
| 100+ | 105.26 грн |