IAUC100N04S6L025ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 5000+ | 31.47 грн |
| 10000+ | 28.31 грн |
| 15000+ | 27.29 грн |
| 25000+ | 24.54 грн |
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Технічний опис IAUC100N04S6L025ATMA1 Infineon Technologies
Description: IAUC100N04S6L025ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2V @ 24µA, Supplier Device Package: PG-TDSON-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IAUC100N04S6L025ATMA1 за ціною від 24.39 грн до 126.08 грн
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IAUC100N04S6L025ATMA1 | Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
на замовлення 34266 шт: термін постачання 21-30 дні (днів) |
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IAUC100N04S6L025ATMA1 | Infineon Technologies |
Description: IAUC100N04S6L025ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 24µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 28331 шт: термін постачання 21-31 дні (днів) |
|
| IAUC100N04S6L025ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
на замовлення 34266 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 112.65 грн |
| 10+ | 70.44 грн |
| 100+ | 40.60 грн |
| 500+ | 31.86 грн |
| 1000+ | 26.64 грн |
| 5000+ | 24.39 грн |
| IAUC100N04S6L025ATMA1 |
|
Виробник: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Qualification: AEC-Q101
на замовлення 28331 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 126.08 грн |
| 10+ | 76.89 грн |
| 100+ | 51.15 грн |
| 500+ | 37.63 грн |
| 1000+ | 34.29 грн |
| 2000+ | 31.48 грн |