IAUC100N08S5N031ATMA1 Infineon Technologies
на замовлення 3374 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 181.10 грн |
| 10+ | 135.37 грн |
| 100+ | 84.60 грн |
| 250+ | 83.87 грн |
| 500+ | 69.15 грн |
| 1000+ | 65.92 грн |
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Технічний опис IAUC100N08S5N031ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON-8-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 95µA, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції IAUC100N08S5N031ATMA1 за ціною від 70.16 грн до 208.50 грн
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IAUC100N08S5N031ATMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 80V 100A TDSON-8-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3485 шт: термін постачання 21-31 дні (днів) |
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| IAUC100N08S5N031ATMA1 | Виробник : Infineon Technologies |
N Channel Power MOSFET |
товару немає в наявності |
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| IAUC100N08S5N031ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of package: reel; tape Technology: OptiMOS™ 5 кількість в упаковці: 5000 шт |
товару немає в наявності |
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IAUC100N08S5N031ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 80V 100A TDSON-8-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
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| IAUC100N08S5N031ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of package: reel; tape Technology: OptiMOS™ 5 |
товару немає в наявності |