Технічний опис IAUC100N08S5N034ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 132A (Tj), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 78µA, Supplier Device Package: PG-TDSON-8-34, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUC100N08S5N034ATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
IAUC100N08S5N034ATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() |
товару немає в наявності |
||
![]() |
IAUC100N08S5N034ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 132A (Tj) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 78µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
|
|
IAUC100N08S5N034ATMA1 | Виробник : Infineon Technologies |
![]() |
товару немає в наявності |