Технічний опис IAUC100N08S5N034ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 132A (Tj), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 78µA, Supplier Device Package: PG-TDSON-8-34, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUC100N08S5N034ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IAUC100N08S5N034ATMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W Case: PG-TDSON-8 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 22A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Kind of package: reel; tape Gate charge: 66nC Technology: OptiMOS™ 5 кількість в упаковці: 5000 шт |
товару немає в наявності |
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IAUC100N08S5N034ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 132A (Tj) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 78µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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IAUC100N08S5N034ATMA1 | Виробник : Infineon Technologies |
MOSFETs MOSFET_(75V 120V( |
товару немає в наявності |
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| IAUC100N08S5N034ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W Case: PG-TDSON-8 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 22A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Kind of package: reel; tape Gate charge: 66nC Technology: OptiMOS™ 5 |
товару немає в наявності |