IAUC100N10S5L040ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Технічний опис IAUC100N10S5L040ATMA1 Infineon Technologies
Description: INFINEON - IAUC100N10S5L040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4000 µohm, TDSON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 167W, Gate-Source-Schwellenspannung, max.: 1.7V, euEccn: NLR, Verlustleistung: 167W, Bauform - Transistor: TDSON, Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 8Pin(s), Produktpalette: OptiMOS 5, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0033ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 4000µohm, SVHC: No SVHC (21-Jan-2025).
Інші пропозиції IAUC100N10S5L040ATMA1 за ціною від 69.07 грн до 271.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IAUC100N10S5L040ATMA1 | INFINEON |
Description: INFINEON - IAUC100N10S5L040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4000 µohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 167W Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0033ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 4000µohm SVHC: No SVHC (21-Jan-2025) |
на замовлення 2771 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5L040ATMA1 | Infineon Technologies |
MOSFETs MOSFET_(75V 120V( |
на замовлення 20909 шт: термін постачання 21-30 дні (днів) |
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IAUC100N10S5L040ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A 8TDSON-34 Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-34 Vgs(th) (Max) @ Id: 2V @ 90µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V |
на замовлення 7707 шт: термін постачання 21-31 дні (днів) |
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| IAUC100N10S5L040ATMA1 |
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Виробник: INFINEON
Description: INFINEON - IAUC100N10S5L040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4000 µohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 167W
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 167W
Bauform - Transistor: TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0033ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 4000µohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IAUC100N10S5L040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4000 µohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 167W
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 167W
Bauform - Transistor: TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0033ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 4000µohm
SVHC: No SVHC (21-Jan-2025)
на замовлення 2771 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 105.25 грн |
| 500+ | 76.36 грн |
| 1000+ | 69.07 грн |
| IAUC100N10S5L040ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
MOSFETs MOSFET_(75V 120V(
на замовлення 20909 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 267.25 грн |
| 10+ | 171.84 грн |
| 100+ | 104.31 грн |
| 500+ | 87.40 грн |
| 1000+ | 81.05 грн |
| 2500+ | 76.12 грн |
| IAUC100N10S5L040ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Description: MOSFET N-CH 100V 100A 8TDSON-34
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
на замовлення 7707 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 271.18 грн |
| 10+ | 169.74 грн |
| 100+ | 117.75 грн |
| 500+ | 89.64 грн |
| 1000+ | 82.93 грн |
| 2000+ | 77.30 грн |