IAUC120N04S6L009ATMA1 Infineon Technologies
на замовлення 3561 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 184.88 грн |
| 10+ | 127.57 грн |
| 25+ | 108.66 грн |
| 100+ | 82.25 грн |
| 250+ | 79.23 грн |
| 500+ | 67.24 грн |
| 1000+ | 58.71 грн |
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Технічний опис IAUC120N04S6L009ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 150A TDSON-8-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2V @ 90µA, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Qualification: AEC-Q101.
Інші пропозиції IAUC120N04S6L009ATMA1 за ціною від 79.05 грн до 185.30 грн
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IAUC120N04S6L009ATMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 40V 150A TDSON-8-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 327 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L009ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R |
товару немає в наявності |
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| IAUC120N04S6L009ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 кількість в упаковці: 5000 шт |
товару немає в наявності |
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IAUC120N04S6L009ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 150A TDSON-8-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Qualification: AEC-Q101 |
товару немає в наявності |
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| IAUC120N04S6L009ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 |
товару немає в наявності |