IAUC120N04S6L012ATMA1 Infineon Technologies

Description: IAUC120N04S6L012ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2V @ 60µA, Supplier Device Package: PG-TDSON-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V, Qualification: AEC-Q101.