IAUC120N04S6N010ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис IAUC120N04S6N010ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 150A TDSON-8-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3V @ 90µA, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IAUC120N04S6N010ATMA1 за ціною від 59.91 грн до 225.98 грн
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IAUC120N04S6N010ATMA1 | Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
на замовлення 2220 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6N010ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 150A TDSON-8-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
| IAUC120N04S6N010ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
на замовлення 2220 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 223.66 грн |
| 10+ | 141.85 грн |
| 100+ | 84.58 грн |
| 500+ | 69.07 грн |
| 1000+ | 63.65 грн |
| 2500+ | 61.81 грн |
| 5000+ | 59.91 грн |
| IAUC120N04S6N010ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 225.98 грн |
| 10+ | 140.42 грн |
| 100+ | 96.40 грн |
| 500+ | 72.81 грн |
| 1000+ | 67.13 грн |
| 2000+ | 62.36 грн |