IAUC120N06S5L011ATMA1 Infineon Technologies
на замовлення 9148 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 280.11 грн |
| 10+ | 180.81 грн |
| 100+ | 109.98 грн |
| 500+ | 96.04 грн |
| 1000+ | 92.16 грн |
| 2500+ | 89.84 грн |
| 5000+ | 81.32 грн |
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Технічний опис IAUC120N06S5L011ATMA1 Infineon Technologies
Description: MOSFET_)40V 60V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310A (Tj), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 130µA, Supplier Device Package: PG-TDSON-8-53, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUC120N06S5L011ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IAUC120N06S5L011ATMA1 | Виробник : Infineon Technologies |
 IAUC120N06S5L011 Trans MOSFET T/R |
товару немає в наявності |
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IAUC120N06S5L011ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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IAUC120N06S5L011ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_)40V 60V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |