IAUC120N06S5N015ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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Технічний опис IAUC120N06S5N015ATMA1 Infineon Technologies
Description: MOSFET_)40V 60V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 94µA, Supplier Device Package: PG-TDSON-8-43, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції IAUC120N06S5N015ATMA1 за ціною від 74.94 грн до 163.03 грн
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IAUC120N06S5N015ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 94µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| IAUC120N06S5N015ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.03 грн |
| 10+ | 116.31 грн |
| 25+ | 106.18 грн |
| 100+ | 89.24 грн |
| 250+ | 84.26 грн |
| 500+ | 81.26 грн |
| 1000+ | 77.50 грн |
| 2500+ | 74.94 грн |