IAUC120N06S5N032ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис IAUC120N06S5N032ATMA1 Infineon Technologies
Description: INFINEON - IAUC120N06S5N032ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 2660 µohm, TDSON-8-34, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 120A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.4V, euEccn: NLR, Verlustleistung: 94W, Bauform - Transistor: TDSON-8-34, Anzahl der Pins: 8Pin(s), Produktpalette: OptiMOS-5 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 2660µohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції IAUC120N06S5N032ATMA1 за ціною від 34.40 грн до 149.07 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IAUC120N06S5N032ATMA1 | INFINEON |
Description: INFINEON - IAUC120N06S5N032ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 2660 µohm, TDSON-8-34, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 94W Bauform - Transistor: TDSON-8-34 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2660µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 4549 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5N032ATMA1 | Infineon Technologies |
MOSFETs 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5 |
на замовлення 3755 шт: термін постачання 21-30 дні (днів) |
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IAUC120N06S5N032ATMA1 | INFINEON |
Description: INFINEON - IAUC120N06S5N032ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 2660 µohm, TDSON-8-34, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 94W Bauform - Transistor: TDSON-8-34 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2660µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 4549 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5N032ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 44µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 8147 шт: термін постачання 21-31 дні (днів) |
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| IAUC120N06S5N032ATMA1 |
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Виробник: INFINEON
Description: INFINEON - IAUC120N06S5N032ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 2660 µohm, TDSON-8-34, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.4V
euEccn: NLR
Verlustleistung: 94W
Bauform - Transistor: TDSON-8-34
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2660µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IAUC120N06S5N032ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 2660 µohm, TDSON-8-34, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.4V
euEccn: NLR
Verlustleistung: 94W
Bauform - Transistor: TDSON-8-34
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2660µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 4549 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 61.75 грн |
| 500+ | 41.84 грн |
| 1000+ | 34.40 грн |
| IAUC120N06S5N032ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
MOSFETs 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
на замовлення 3755 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 143.08 грн |
| 10+ | 89.97 грн |
| 100+ | 52.65 грн |
| 500+ | 41.80 грн |
| 1000+ | 37.14 грн |
| 5000+ | 35.31 грн |
| IAUC120N06S5N032ATMA1 |
|
Виробник: INFINEON
Description: INFINEON - IAUC120N06S5N032ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 2660 µohm, TDSON-8-34, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.4V
euEccn: NLR
Verlustleistung: 94W
Bauform - Transistor: TDSON-8-34
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2660µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IAUC120N06S5N032ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 2660 µohm, TDSON-8-34, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.4V
euEccn: NLR
Verlustleistung: 94W
Bauform - Transistor: TDSON-8-34
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2660µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 4549 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 143.90 грн |
| 10+ | 91.27 грн |
| 100+ | 61.75 грн |
| 500+ | 41.84 грн |
| 1000+ | 34.40 грн |
| IAUC120N06S5N032ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Qualification: AEC-Q101
на замовлення 8147 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 149.07 грн |
| 10+ | 91.93 грн |
| 100+ | 62.08 грн |
| 500+ | 46.26 грн |
| 1000+ | 42.40 грн |
| 2000+ | 39.45 грн |