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IAUC45N04S6L063HATMA1

IAUC45N04S6L063HATMA1 Infineon Technologies

Infineon_IAUC45N04S6L063H_DataSheet_v01_00_EN.pdf
Виробник: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
на замовлення 8652 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IAUC45N04S6L063HATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 45A 8TDSON, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TDSON-8-57, Vgs(th) (Max) @ Id: 2V @ 9µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 45A (Tj), Drain to Source Voltage (Vdss): 40V, Power - Max: 41W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

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IAUC45N04S6L063HATMA1 IAUC45N04S6L063HATMA1 Infineon Technologies Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5 Description: MOSFET 2N-CH 40V 45A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 9µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IAUC45N04S6L063HATMA1 IAUC45N04S6L063HATMA1 Infineon Technologies Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5 Description: MOSFET 2N-CH 40V 45A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 9µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IAUC45N04S6L063HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Power dissipation: 41W
Case: PG-TDSON-8
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 8.5mΩ
Drain current: 15A
Drain-source voltage: 40V
Pulsed drain current: 134A
Gate-source voltage: ±16V
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IAUC45N04S6L063HATMA1 Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5
IAUC45N04S6L063HATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 9µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IAUC45N04S6L063HATMA1 Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5
IAUC45N04S6L063HATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 9µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IAUC45N04S6L063HATMA1 Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Power dissipation: 41W
Case: PG-TDSON-8
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 8.5mΩ
Drain current: 15A
Drain-source voltage: 40V
Pulsed drain current: 134A
Gate-source voltage: ±16V
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.