IAUC60N04S6L030HATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 303+ | 64.85 грн |
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Технічний опис IAUC60N04S6L030HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 75W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 60A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V, Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 25µA, Supplier Device Package: PG-TDSON-8-56, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUC60N04S6L030HATMA1 за ціною від 49.16 грн до 86.02 грн
| Фото | Назва | Виробник | Інформація |
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IAUC60N04S6L030HATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
на замовлення 13958 шт: термін постачання 21-30 дні (днів) |
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| IAUC60N04S6L030HATMA1 | Виробник : Infineon Technologies |
SP004134512 |
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| IAUC60N04S6L030HATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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IAUC60N04S6L030HATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: PG-TDSON-8-56 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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IAUC60N04S6L030HATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: PG-TDSON-8-56 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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| IAUC60N04S6L030HATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |