IAUC60N04S6L045HATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
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Технічний опис IAUC60N04S6L045HATMA1 Infineon Technologies
Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 3700 µohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 60A, Dauer-Drainstrom Id, p-Kanal: 60A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 40V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 60A, Drain-Source-Durchgangswiderstand, p-Kanal: 3700µohm, Verlustleistung, p-Kanal: 52W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: TDSON, Anzahl der Pins: 8Pin(s), Produktpalette: OptiMOS 6 Series, Drain-Source-Durchgangswiderstand, n-Kanal: 3700µohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 52W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (21-Jan-2025).
Інші пропозиції IAUC60N04S6L045HATMA1 за ціною від 37.45 грн до 130.08 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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IAUC60N04S6L045HATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSONQualification: AEC-Q101 Grade: Automotive Power - Max: 52W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Part Status: Active Supplier Device Package: PG-TDSON-8-57 Vgs(th) (Max) @ Id: 2V @ 13µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Drain to Source Voltage (Vdss): 40V Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 9625 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L045HATMA1 | INFINEON |
Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 3700 µohmtariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 60A Drain-Source-Durchgangswiderstand, p-Kanal: 3700µohm Verlustleistung, p-Kanal: 52W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 Series Drain-Source-Durchgangswiderstand, n-Kanal: 3700µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 52W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) |
на замовлення 39373 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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IAUC60N04S6L045HATMA1 | INFINEON |
Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 3700 µohmtariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 60A Dauer-Drainstrom Id, p-Kanal: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 60A Drain-Source-Durchgangswiderstand, p-Kanal: 3700µohm Verlustleistung, p-Kanal: 52W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 Series Drain-Source-Durchgangswiderstand, n-Kanal: 3700µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 52W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) |
на замовлення 39373 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| IAUC60N04S6L045HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 9625 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.08 грн |
| 10+ | 79.83 грн |
| 100+ | 53.86 грн |
| 500+ | 40.11 грн |
| 1000+ | 37.45 грн |
| IAUC60N04S6L045HATMA1 |
![]() |
Виробник: INFINEON
Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 3700 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 60A
Drain-Source-Durchgangswiderstand, p-Kanal: 3700µohm
Verlustleistung, p-Kanal: 52W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3700µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 52W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 3700 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 60A
Drain-Source-Durchgangswiderstand, p-Kanal: 3700µohm
Verlustleistung, p-Kanal: 52W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3700µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 52W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
на замовлення 39373 шт:
термін постачання 21-31 дні (днів)
| IAUC60N04S6L045HATMA1 |
![]() |
Виробник: INFINEON
Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 3700 µohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
Dauer-Drainstrom Id, p-Kanal: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 60A
Drain-Source-Durchgangswiderstand, p-Kanal: 3700µohm
Verlustleistung, p-Kanal: 52W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3700µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 52W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 3700 µohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
Dauer-Drainstrom Id, p-Kanal: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 60A
Drain-Source-Durchgangswiderstand, p-Kanal: 3700µohm
Verlustleistung, p-Kanal: 52W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3700µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 52W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
на замовлення 39373 шт:
термін постачання 21-31 дні (днів)


