IAUC60N04S6N031HATMA1 Infineon Technologies
на замовлення 2150 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 118.16 грн |
| 10+ | 84.97 грн |
| 100+ | 63.00 грн |
| 500+ | 55.25 грн |
| 1000+ | 53.25 грн |
| 2500+ | 53.02 грн |
| 5000+ | 45.88 грн |
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Технічний опис IAUC60N04S6N031HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 75W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 60A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V, Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 25µA, Supplier Device Package: PG-TDSON-8-56, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції IAUC60N04S6N031HATMA1 за ціною від 53.07 грн до 170.98 грн
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IAUC60N04S6N031HATMA1 | Виробник : Infineon Technologies |
 Description: MOSFET 2N-CH 40V 60A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3854 шт: термін постачання 21-31 дні (днів) |
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| IAUC60N04S6N031HATMA1 | Виробник : Infineon Technologies |
SP003863382 |
товару немає в наявності |
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IAUC60N04S6N031HATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
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| IAUC60N04S6N031HATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |