IAUC60N04S6N031HATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 50.06 грн |
| 10000+ | 46.49 грн |
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Технічний опис IAUC60N04S6N031HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 75W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 60A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V, Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 25µA, Supplier Device Package: PG-TDSON-8-56, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUC60N04S6N031HATMA1 за ціною від 53.40 грн до 181.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IAUC60N04S6N031HATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 105A 8-Pin TDSON EP T/R Automotive AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N031HATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 25µA Supplier Device Package: PG-TDSON-8-56 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N031HATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 105A 8-Pin TDSON EP T/R Automotive AEC-Q101 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| IAUC60N04S6N031HATMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 40V 105A 8-Pin TDSON EP T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 105A 8-Pin TDSON EP T/R Automotive AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 315+ | 112.50 грн |
| 500+ | 101.26 грн |
| 1000+ | 93.38 грн |
| IAUC60N04S6N031HATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 181.84 грн |
| 10+ | 112.61 грн |
| 100+ | 76.94 грн |
| 500+ | 57.89 грн |
| 1000+ | 53.40 грн |
| IAUC60N04S6N031HATMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 40V 105A 8-Pin TDSON EP T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 105A 8-Pin TDSON EP T/R Automotive AEC-Q101
на замовлення 3 шт:
термін постачання 21-31 дні (днів)