IAUC60N04S6N044ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис IAUC60N04S6N044ATMA1 Infineon Technologies
Description: IAUC60N04S6N044ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3V @ 14µA, Supplier Device Package: PG-TDSON-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IAUC60N04S6N044ATMA1 за ціною від 20.30 грн до 109.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IAUC60N04S6N044ATMA1 | Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
на замовлення 419 шт: термін постачання 21-30 дні (днів) |
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IAUC60N04S6N044ATMA1 | Infineon Technologies |
Description: IAUC60N04S6N044ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 14µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6942 шт: термін постачання 21-31 дні (днів) |
|
| IAUC60N04S6N044ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
на замовлення 419 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 106.08 грн |
| 10+ | 65.01 грн |
| 100+ | 37.36 грн |
| 500+ | 29.25 грн |
| 1000+ | 24.74 грн |
| 2500+ | 23.96 грн |
| 5000+ | 20.30 грн |
| IAUC60N04S6N044ATMA1 |
|
Виробник: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6942 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.42 грн |
| 10+ | 66.43 грн |
| 100+ | 43.86 грн |
| 500+ | 32.07 грн |
| 1000+ | 29.14 грн |
| 2000+ | 26.68 грн |