IAUC60N04S6N050HATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 52W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 60A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V, Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 13µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.